Teledyne HiRel Semiconductors Launches High-Power RF GaN Switch Covering 30 MHz to 5 GHz

The new 20W reflective single-pole double-throw RF GaN switch is designed for high-reliability applications in aerospace and defense.

Teledyne HiRel Semiconductors Launches High-Power RF GaN Switch Covering 30 MHz to 5 GHz.

Teledyne HiRel Semiconductors Launches High-Power RF GaN Switch Covering 30 MHz to 5 GHz

Teledyne HiRel Semiconductors has announced the release of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP. This advanced switch delivers exceptional peak power performance and is engineered to replace traditional Positive-Intrinsic-Negative (PIN) diode-based RF switches commonly deployed in RF front ends for modern tactical and military communication radio systems.

Leveraging a robust wide-bandgap GaN High Electron Mobility Transistor (HEMT) process, the TDSW84230EP offers impressive high breakdown voltage and saturation current capabilities. It comes in a compact 16-pin quad-flat no-lead (QFN) package, measuring 3 mm x 3 mm x 0.8 mm, and is qualified for operation across a wide military temperature range from –55⁰C to 125⁰C.

This SPDT reflective GaN switch integrates monolithic microwave integrated circuit (MMIC) design techniques, supporting up to 20 watts of continuous wave (CW) power handling across a wide frequency range of 30 MHz to 5 GHz. With a low insertion loss of 0.2 dB and a high port isolation of 45 dB, it delivers significant efficiency improvements and space savings compared to PIN diode architectures.

According to Teledyne HiRel, the TDSW84230EP is tailored to address the demanding requirements of modern military and defense software-defined radio architectures. Its high-power GaN design provides an ideal alternative to traditional PIN diode switches, with the ability to tolerate up to 900 mA/mm saturation currents and handle high RF power levels. The inherent characteristics of GaN technology—such as high breakdown voltage and carrier density—enable superior operating power, high linearity, and enhanced support for harmonic and spurious signal suppression compared to conventional solutions.

Teledyne Aerospace & Defense Electronics provides an extensive range of precision-engineered solutions designed to meet the rigorous demands of the harshest operating environments. With a diverse portfolio of custom and off-the-shelf products, the company serves critical applications across avionics, energetics, electronic warfare, missiles, radar and surveillance, satellite communications, aerospace, and test and measurement industries.

The TDSW84230EP is now available for purchase and immediate shipment through Teledyne HiRel Semiconductors or authorized distributors. The devices, offered in commercial-grade versions, are manufactured and shipped from the company’s DoD Trusted Facility located in Milpitas, California.

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