EPC Space Earns GaN JANS MIL-PRF-19500 Certification

The JANS MIL-PRF-19500 certification, overseen by the U.S. Department of Defense, sets rigorous standards for reliability, performance, and environmental resilience in semiconductor components.

EPC Space, a leading provider of radiation-hardened (Rad Hard) GaN-on-silicon transistors and integrated circuits (ICs), has achieved the prestigious JANS MIL-PRF-19500 certification. Both its Andover, Massachusetts facility and wafer fabrication site in Taiwan have been certified, marking a groundbreaking accomplishment in the semiconductor industry.

This certification, overseen by the U.S. Department of Defense, sets rigorous standards for reliability, performance, and environmental resilience in semiconductor components. EPC Space is the first in the world to achieve this certification for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), underlining its leadership in delivering advanced solutions for critical space applications.

Radiation-hardened GaN-based power devices are pivotal for addressing the demanding environments of space. These components, with extensive flight heritage, are integral to applications such as power supplies, motor drives, ion thrusters, and more. Key use cases include satellite power systems, lidar for autonomous navigation and docking, robotics motor drives, and ion thrusters for satellite positioning and interplanetary propulsion of lightweight robotic vehicles.

Looking forward, EPC Space plans to introduce 18 JANS-certified Rad Hard GaN HEMT parts, with voltage ratings from 40V to 300V, throughout 2025. This expansion reinforces the company’s position as a trusted supplier of high-reliability electronics for space missions and other critical applications.

EPC Space continues to revolutionize power management with its high-reliability radiation-hardened enhancement-mode GaN solutions, ensuring performance and dependability in the harshest environments.